Compared to silicon, silicon carbide (SiC) devices have emerged as the most viable candidates for next-generation low-loss semiconductors due to their low on-resistance and superior high-temperature, high-frequency, and high-voltage performance. SiC also allows designers to use fewer components, further reducing design complexity.
The low on-resistance of SiC devices helps to significantly reduce energy consumption, enabling users to design environmentally friendly products and systems that reduce CO2 emissions .
GDsicsemi is a leader in the development of SiC power devices and modules that provide higher energy savings in applications across multiple industries.
Schottky diodes (SBDs) have a small total capacitive charge (Qc), which reduces switching losses while enabling high-speed switching operation. Therefore, they are widely used in PFC circuits of power supplies. Furthermore, unlike silicon-based fast recovery diodes where trr increases with temperature, silicon carbide devices maintain constant characteristics, resulting in better performance. These products provide greater inrush current capability while further improving the smaller forward voltage. Silicon carbide Schottky diodes provide higher reliability for power conversion systems, making them ideal for battery chargers, renewable energy solar panels and electric vehicle charging stations.
With its excellent characteristics of high voltage, high frequency, high temperature and high speed, silicon carbide MOS tube can greatly improve the energy density of various power electronic equipment, reduce cost, enhance reliability and applicability, improve power conversion efficiency, and reduce losses. SiC has excellent material properties, and the increase in on-resistance resistance is extremely small, which can provide a smaller package and more energy-saving effect than Si devices. times, so it can work efficiently in a higher temperature environment.
SiC MOSFET Have an almost instantaneous switch of high frequency switch ability, can build suitable for high pressure type switch is set , make technical personnel can get higher quality of the test results. In the field of intelligent manufacturing, by providing a shot time and improve productivity, to improve the efficiency of pulse generator. For new energy charging pile, and the server power supply, DC - DC converter industry of photovoltaic inverter, variable speed motor drive to provide good system efficiency and performance.
| product name | VRRM | Resistance Ron | package |
|---|---|---|---|
| C3M0120065K | 650V | 120mΩ | TO-247-4 |
| C3M0075120K | 1200V | 75mΩ | TO-247-4 |
| C3M0065100K | 1000V | 65mΩ | TO-247-4 |
| C3M0060065K | 650V | 60mΩ | TO-247-4 |
| C3M0045065K | 650V | 45mΩ | TO-247-4 |
| C3M0040120K | 1200V | 40mΩ | TO-247-4 |
Integrating SiC MOSFETs and SBDs into full SiC power modules significantly reduces switching losses compared to conventional IGBT modules. This improves the efficiency of industrial equipment, GDsicsemi power module high-power pulsed plasma generators provide reaction fields up to 200kHz to better meet customer requirements.
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