Defects down 2000 times! This SiC company will expand production (graphics)
time:2022-09-16author：gdsicsemi
Some time ago, Showa Denko successfully produced 8-inch SiC epitaxial wafers (.Click here.). Recently, a foreign SiC company is also about to mass-produce 8-inch SiC substrates in the near future. More importantly, the company's crystal growth process originated from Linköping University, which can reduce BPD defects by 2000 times. On September 12, KISAB’s official website announced that they have completed a financing of 7.5 million euros (about 52.6 million yuan), which will be used to expand the production of its defect-free silicon carbide substrates.
It is understood that this round of financing was led by Fairpoint Capital, with participation from existing investors such as Industrifonden and LPE. According to Hadar Cars, investment director of Fairpoint Capital, "KISAB can grow defect-free SiC substrates, and will also mass-produce defect-free 8-inch SiC substrates in the near future."
According to public information, KISAB was established in 2017 and is headquartered in Stockholm, Sweden. . According to the official website, KISAB has developed the FSGP-M process (fast sublimation growth process) that can produce high-quality silicon carbide substrates. The process is said to minimize substrate defects. According to KISAB, in the past 6-inch SiC substrate grown by PVT, the BPD density was about 2000cm-2. Compared with the same size, FSGP-M can reduce the BPD density to <1cm-2.
And compared to PVT, FSGP-M has another advantage—it can grow at temperatures below 2000°C. "Experts say three and a half generations" found that the FSGP process originated from Linköping University and was jointly developed by Professor Rositza Yakimova and Associate Professor Docent Mikael Syväjärvi, who also used the process to produce cubic silicon carbide for solar cells and graphene. At the same time, KISAB has also developed a CVD process for the production of source materials used in the FSGP-M process, which can significantly reduce the cost of manufacturing high-quality SiC substrates.
