Wider band gap, higher breakdown electric field, higher thermal conductivity, higher electron saturation rate, higher radiation resistance...
The company's silicon carbide power devices cover 650V/2A-100A, 1200V/2A-90A, 1700V/5A-80A and other series. The products have been put into mass production, and the products can fully match the advanced quality and level of international brands. It has successively launched silicon carbide Schottky diodes with full current and voltage levels, and silicon carbide MOSFET series products that have passed industrial-grade and automotive-grade reliability tests. , smart grid, high-frequency welding, rail transit, industrial control special power supply, national defense and other fields. Due to its high-speed switching and low on-resistance characteristics, it can exhibit excellent electrical characteristics even under high temperature conditions, greatly reducing switching losses, making components smaller and lighter, more efficient, and improving overall system reliability. , which can increase the cruising range of electric vehicles by 10%, reduce the weight of the whole vehicle by about 5%, and realize safe and stable operation in the high temperature environment of the designed charging pile.
Features：high temperature resistance; high voltage resistance; high current resistance; high power; high operating frequency; low power consumption; low heat generation; strong radiation resistance; smaller size. Advantages：Replacing bipolar rectifiers with unipolar rectifiers has basically no switching losses, higher efficiency, lower requirements for heat sinks, and parallel devices will not cause thermal runaway.© 2022 GDSiCSemi CO.,LTD copyright.
SIC Schottky
Silicon Carbide Schottky Diodes
SiC MOSFET
Silicon carbide field effect MOS
SiC IGBT Module
Silicon carbide power modules
